PART |
Description |
Maker |
K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
NN5118160 NN5118160A NN5118160AJ-60 NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM
|
N.A. ETC[ETC]
|
K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C1004C-5 KM416C1004C-L45 KM416C1004C-L5 KM416 |
1M X 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
|
SAMSUNG[Samsung semiconductor]
|
K4F641612C-TC K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C4004C KM416C4104C KM416C4004CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416C1200B KM416V1000B KM416V1200B KM416C1000B SA |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out 256 × 16Bit的CMOS动态RAM的扩展数据输
|
Samsung Semiconductor Co., Ltd.
|
KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor Samsung Electronic
|
GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output 35ns; 64K x 16 CMOS dynamic RAM with extended data output 40ns; 64K x 16 CMOS dynamic RAM with extended data output 45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|